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本文评述Ⅲ-Ⅴ族化合物半导体欧姆接触工艺。首先介绍了金属-半导体接触(肖特基势垒)内电流输运的基本原理。所研究的电流输运方式是越过势垒的热离子发射和隧穿过势垒的热离子场或场发射。特别注意决定导电主要方式的温度和掺杂浓度这两个参数。当基本的导电方式从热离子发射为主转变到隧穿为主时,接触的电流-电压特性亦从整流性变到欧姆性。然后描述制备Ⅲ-Ⅴ族化合物半导体欧姆接触的实验技术。讨论了适用于特定器件的接触问题。最后,讨论Ⅲ-Ⅴ混晶接触的困难。
This article reviews the III-V compound semiconductor ohmic contact process. First, the basic principle of current transport in metal-semiconductor contact (Schottky barrier) is introduced. The current transport modes studied are thermionic emission across the barrier and thermionic or tunneling through the barrier. Particular attention to determine the main way of conducting temperature and doping concentration of these two parameters. When the basic mode of conduction changes from thermionic emission to tunneling, the current-voltage characteristics of the contacts also change from rectification to ohmicity. Next, experimental techniques for preparing ohmic contacts of Group III-V compound semiconductors will be described. Discussed contact problems for specific devices. Finally, the difficulty of III-V mixed crystal contact is discussed.