最近日本化学周报报导日本工业技术院制成一种划时代耐热薄膜材料(以氮化物为基体的介电薄膜)用于电子器件。这种薄膜材料以氮化铝和氮化硼为基体,通过反应蒸发,成为10μ的高质量单晶薄膜。在该院的计划中,研究开发部承担了以氮化物 Recently Japan’s Chemical Weekly reported that the Japan Industrial Technology Institute made an epoch-making heat-resistant thin film material (nitride-based dielectric film) for electronic devices. This thin film material with aluminum nitride and boron nitride as the matrix, by reaction evaporation, become 10μ high-quality single crystal thin film. In the hospital’s plan, the research and development department assumed the nitrides