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研究了GaAs高指数面(331)A在原子氢辅助下分子束外延形貌的演化.原子力显微镜测试表明:在常规分子束外延情况下,GaAs外延层台阶的厚度和台面的宽度随衬底温度的升高而增加,增加外延层厚度会导致台阶的密度和台面的宽度增加然后饱和.而在原子氢辅助分子束外延情况下,当GaAs淀积量相同时GaAs外延层台阶的密度增大宽度减小.认为这是由于原子氢的作用导致Ga原子迁移长度的减小.在GaAs(331)A台阶基底上生长出InAs自组织纳米线,用光荧光测试研究了其光学各项异性特征.
The evolution of molecular beam epitaxy on the high index surface (331) A of GaAs with atomic hydrogen was investigated. Atomic force microscopy tests showed that the thickness of the GaAs epitaxial layer and the width of the mesas vary with the substrate temperature Increasing the thickness of the epitaxial layer will result in the increase of density and the width of the mesa and then the saturation of the mesa.But in the case of atomic hydrogen-assisted molecular beam epitaxy, when the GaAs deposition amount is the same, the density of the GaAs epitaxial layer increases in width Decrease, which is attributed to the decrease of the migration length of Ga atom due to the action of atomic hydrogen.InAs self-organized nanowires grow on the GaAs (331) A terrace substrate and their optical anisotropy characteristics are studied by optical fluorescence spectroscopy.