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基于MEMS技术制作了太赫兹(THz)滤波器样品,研究了制作滤波器的工艺流程方案,其关键工艺技术包括硅深槽刻蚀技术、深槽结构的表面金属化技术、阳极键合和金-硅共晶键合技术。采用4μm的热氧化硅层作刻蚀掩膜,成功完成了800μm的深槽硅干法刻蚀;采用基片倾斜放置、多次离子束溅射和电镀加厚的方法完成了深槽结构的表面金属化,内部金属层厚度为3~5μm;用硅-玻璃阳极键合技术和金-硅共晶键合技术实现了三层结构、四面封闭的波导滤波器样品加工。测试结果表明,研制的滤波器样品中心频率138GHz,带宽15GHz,插损小于3dB。
Based on the MEMS technology, a THz filter sample was made and the process scheme for making the filter was studied. The key process technologies include silicon deep trench etching, surface metallization of deep trench structure, anodic bonding and gold - Silicon eutectic bonding technology. Using 4μm thermal oxide layer as an etching mask, a deep trench silicon dry etching of 800μm has been successfully completed. The deep trench structure has been completed by obliquely placing the substrate, multiple ion beam sputtering and plating thickening Surface metallization, the thickness of the internal metal layer is 3 ~ 5μm; silicon-glass anodic bonding technology and gold-silicon eutectic bonding technology to achieve a three-layer structure, surrounded by closed waveguide filter sample processing. The test results show that the filter center frequency 138GHz, bandwidth 15GHz, insertion loss less than 3dB.