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通过GaN基微纳米器件中纳米尺度界面的热输运成为微系统热管理和热设计的热点和难点,而通过GaN/Al_2 O_3之间界面热阻尚未测试。首先采用双波长TDTR方法测量了Al膜与GaN薄膜之间的界面热阻,然后借助热阻抗网络和参数敏感性分析,利用宽频3ω法对Al/GaN/Al_2 O_3多层薄膜结构内部界面热阻进行实验重构。两种方法测量的GaN/Al_2 O_3之间界面热阻量级相同,相互验证了测试结果的合理性。两种方法结合可实现微纳米多层结构多个热物性参数的精细描述。
The heat transport through the nano-scale interface in GaN-based micro-nano devices has become a hot and difficult issue in micro-system thermal management and thermal design, while the thermal interface resistance through GaN / Al 2 O 3 has not been tested. Firstly, the interface thermal impedance between Al film and GaN film was measured by dual-wavelength TDTR method. Then the thermal impedance network and parameter sensitivity analysis were used to analyze the thermal resistance of Al / GaN / Al 2 O 3 multi-layer thin film Experiment reconstruction. The two methods measured the same magnitude of interface thermal resistance between GaN / Al 2 O 3 and verified the rationality of the test results. The combination of these two methods can be used to describe the thermal properties of many micro / nano multilayer structures.