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本文就总剂量辐照效应评述了通过使用氧化层侧壁隔离提高器件性能的双极工艺的进展。对得克萨斯仪器公司的ALS器件进行了广泛的钴-60试验,并比较了“围墙式”和“窝形”发射极器件的结果。业已确定,隔离氧化层和残余外延材料之间的硅-二氧化硅界面处的反型是引起I_(IH)漏电流的原因。已制定了控制措施来改进γ总剂量容限。
In this paper, the progress of the bipolar process for improving device performance by using oxide sidewall isolation has been reviewed for total dose irradiation effects. Extensive Cobalt-60 tests were performed on Texas Instruments ALS devices and the results for “walled” and “nest” emitter devices were compared. It has been determined that the inversion at the silicon-silicon dioxide interface between the isolation oxide and the residual epitaxial material is responsible for the I_ (IH) leakage current. Control measures have been developed to improve gamma total dose tolerance.