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近来我们对本厂生产的部分平面2CK管芯进行电参数测试,发现其中相当数量的管芯存在击穿电压蠕变特性,PN结的雪崩击穿电压可由原来的50伏增至53伏、55伏、58伏、60伏……,击穿数值漂移20％是极为普遍的,有的数值漂移可高达50％。发生蠕变后的管芯,在室温下存放一段时间后,某些管芯仍可恢复或部分恢复到原来的击穿数值。关于击穿电压蠕变的机理,国内外都有过报导,一般认为击穿蠕变是由于氧化层外表电荷或氧化层中的可动离子在表面电场作用下发生了重新分布,因而使表面势垒区宽度发生变化,表面处电场减弱,导致了击穿电压增大。当氧化层厚度较小,氧化层外表电荷密度较高时,这种正负电
Recently, we produced part of the plane 2CK die electrical parameters tested and found that a considerable number of die there breakdown voltage creep characteristics, PN junction avalanche breakdown voltage from the original 50 volts to 53 volts, 55 volts , 58 volts, 60 volts ... ... breakdown breakdown value of 20% is extremely common, and some numerical drift up to 50%. After a creep of the die, some of the die may still recover or partially return to its original breakdown value after being stored at room temperature for a period of time. On the breakdown voltage creep mechanism, both at home and abroad have been reported that the breakdown breakdown is generally believed that the surface charge of oxide or oxide layer in the surface under the action of the electric field under the action of redistribution, so that the surface potential Base area width changes, the surface of the electric field weakened, resulting in increased breakdown voltage. When the oxide layer thickness is small, the oxide outer surface of the charge density is high, this positive and negative