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大气条件下弥散放电能够产生大面积、高能量密度的低温等离子体,在导体表面薄膜沉积领域具有广阔的应用前景。该文研究了大气压下Cu片表面类SiO_2薄膜的沉积方法,以六甲基二硅氧烷为反应前驱物,使用正极性微秒脉冲电源激发针–板电极结构弥散放电,探讨了沉积过程中不同的放电气体对放电过程以及沉积薄膜化学成分的影响。实验结果表明,分别采用氩气和空气作为放电气体时,在相同电压下前者具有更大的放电功率、更强的发射光谱强度以及更高的沉积薄膜效率。傅里叶变换红外光谱(Fourier transform infrared spectroscopy,FTIR)分析以及水接触角测量结果表明,空气放电沉积薄膜氧化程度较高,属于类SiO_2薄膜,其水接触角为85°;而氩气放电沉积薄膜是有机硅薄膜,其水接触角为100°。此外,通过优化空气/氩气混合气体的比例,在700sccm空气/500 sccm氩气条件下得到了氧化程度更高的薄膜,其水接触角也进一步降低到76°。以上实验结果表明,使用大气压弥散放电能够在Cu片表面有效沉积类SiO_2薄膜。
Dispersion discharge under atmospheric conditions can generate large-area, high-energy-density low-temperature plasma, which has broad application prospects in the field of thin film deposition on the conductor surface. In this paper, the deposition of SiO 2 thin films on Cu surface under atmospheric pressure was investigated. The hexagonal disiloxane was used as the precursor of the reaction. The positive microsecond pulse power was used to excite the pin-plate electrode structure. Effects of different discharge gases on discharge process and chemical composition of deposited films. The experimental results show that the former has higher discharge power, stronger emission spectrum intensity and higher deposition film efficiency at the same voltage when using argon and air as the discharge gas respectively. Fourier transform infrared spectroscopy (FTIR) analysis and water contact angle measurements showed that the air-discharge deposited films were highly oxidized and belong to the class SiO 2 films with a water contact angle of 85 °. The results of argon discharge deposition The film is a silicone film with a water contact angle of 100 °. In addition, by optimizing the air / argon gas mixture ratio, a more oxidized film was obtained at 700 sccm of air / 500 sccm of argon and the water contact angle was further reduced to 76 °. The above experimental results show that the use of atmospheric pressure diffused discharge can be effectively deposited on the surface of Cu-like SiO 2 film.