Sol-gel derived bismuth cerium titanate (BCT) thin films with different Bi contents in precursor solu- tions were deposited on the Pt/Ti/SiO2/Si substrates. The effect of Bi content in the precursor solutions on the microstructure and ferroelectric properties of the films was investigated. It is found that with Bi content increasing from 90% to 110% of the nominal value in the precursor solutions, the dissipation factor and leakage current density of the BCT films obtained decrease, while the grain sizes, dielectric constant and remanent polarizations (2Pr) increase, and concurrently, a Bi-deficient phase of Bi2Ti2O7 gradually disappears. The film prepared from solution with 110% of the nominal Bi content exhibits pure Bi-layered Aurivillius polycrystalline phase, and the 2Pr value and coercive field value are 67.1 μC/cm2 and 299.7 kV/cm, respectively. Their dielectric constant and the dissipation factor are about 172 and 0.033 at 1 kHz, respectively. Moreover, this film shows no polarization fatigue after 4.46×109 switching cycles. Sol-gel derived bismuth cerium titanate (BCT) thin films with different Bi contents in precursor solu tions were deposited on the Pt / Ti / SiO2 / Si substrates. The effect of Bi content in the precursor solutions on the microstructure and ferroelectric properties the films was investigated. It is found that with the content increase of from 90% to 110% of the nominal value in the precursor solutions, the dissipation factor and the leakage current density of the BCT films obtained decrease, while the grain sizes, dielectric constant and The film prepared from solution with 110% of the nominal Bi content exhibits pure Bi-layered Aurivillius polycrystalline phase, and the 2Pr value and coercive field value are 67.1 μC / cm2 and 299.7 kV / cm, respectively. Their dielectric constant and the dissipation factor are about 172 and 0.033 at 1 kHz, respectively. rization fatigue after 4.46 × 109 switching cycles.