介绍了一种基于GaAs HFET结构的S波段内匹配器件的设计方法。由于大栅宽器件模型难以准确确定,提取了具有相似结构的小栅宽器件模型。在ADS设计环境中,利用Load-Pull算法推算出大栅宽器件的管芯阻抗。器件采用两个栅宽为16mm的管芯进行功率合成。对于匹配电路的设计,首先通过一级LC低通滤波网络进行阻抗变换,将每个管芯的阻抗提升到10Ω左右,再通过Wilkinson功分器将阻抗变换到50Ω。电容和功分器采用瓷片加工,电感则通过金丝实现。研制成功的内匹配功率管,其工作频率为2.2～2.5GHz,输出功率P1dB大于20W,功率增益G1dB大于14dB,功率附加效率大于48%。 A design method of S-band internal matching device based on GaAs HFET structure is introduced. Because of the difficulty of accurately determining the device model of wide gate width, a small gate width device model with similar structure is extracted. In the ADS design environment, Load-Pull algorithm is used to calculate the die-gate device impedance. The device uses two 16mm-width gate for power synthesis. For the design of the matching circuit, the impedance is first transformed by the first-order LC low-pass filter network, the impedance of each die is raised to about 10Ω, and then the impedance is transformed to 50Ω through the Wilkinson power divider. Capacitors and power splitters using ceramic processing, inductance is achieved through gold wire. Developed within the matched power tube, its operating frequency of 2.2 ~ 2.5GHz, output power P1dB greater than 20W, power gain G1dB greater than 14dB, additional power efficiency greater than 48%.