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The thermal stability of strained AlGaN/GaN heterostructures is characterized by comparing unannealed and 700℃ 30-min annealed Ni Schottky contacts prepared on strained AlGaN/GaN heterostructures. Using photoemission, capacitance-voltage measurements, and the self-consistent solution of Schrodingers and Poissons equations, it is found that after 700℃ 30-min thermal annealing the Schottky barrier height of Ni Schottky contacts on strained AlGaN/GaN heterostructures is increased, and the sheet density of polarization charges and the sheet density of two-dimensional electron gas (2DEG) electrons for the strained AlGaN/GaN heterostructures are reduced. These results are closely related to the performance of AlGaN/GaN HFETs at high temperature.