在 CMOS工艺结构中,将位于阱中的 MOS 器件加适当的偏置,可以使其变为体内器件、以横向双极管的模式工作.本文利用 3μm P-well和 2μm N-well两种 CMOS工艺设计了这种横向双极器件,分析讨论了这种器件的工作原理和特点,并给出其典型的直流和交流参数的实验数据.这些分析和实验数据将有助于电路设计者了解和掌握该器件的电流、频率工作范围及特性,以便在CMOS电路中充分发挥其特长. In the CMOS process structure, the MOS device in the well is properly biased so that it can become an in-vivo device and operate in a lateral bipolar transistor mode. In this paper, two types of CMOS devices, 3μm P-well and 2μm N-well The design of such a lateral bipolar device, analysis and discussion of the working principle and characteristics of this device, and given its typical DC and AC parameters of experimental data.These analysis and experimental data will help circuit designers to understand and Master the device current, frequency operating range and characteristics, in order to give full play to its advantages in CMOS circuits.