论文部分内容阅读
随着IGBT芯片越来越薄和电流增益越来越低,电流集中效应在IGBT短路关断过程中变得更显著,尤其是在自夹挤模式下。为了提高IGBT短路关断过程中的坚固性,文章通过对称的多元胞电热耦合仿真的方式研究了IGBT主要的器件参数对IGBT在短路关断过程中,尤其是在自夹挤模式下的坚固性的影响。结果显示,有更高掺杂、更宽的漂移区、更低的饱和电流密度和更宽的元胞尺寸可以实现更高的短路关断坚固性;而且,存在使得短路关断坚固性最高的电流增益最优值。
As the IGBT chip becomes thinner and the current gain gets lower and lower, the current concentration effect becomes more pronounced during IGBT short-circuit turn-off, especially in the self-pinch mode. In order to improve the robustness of the IGBT during the short-circuit shutdown, the article studies the main IGBT device parameters on the IGBT's short-circuit turn-off process, especially in the self-pinch mode, through symmetrical multicellular electrothermal coupling simulation Impact. The results show that higher doping, wider drift region, lower saturation current density and wider cell size can achieve higher short-circuit turn-off ruggedness; moreover, there are short-circuit turn-off ruggedness Current gain optimal value.