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GaN基高压直流发光二极管工艺制备,采用蓝宝石图形衬底(PSS)外延片制备正梯形芯粒结构的GaN基高压直流LED.相对其他结构器件,该结构器件发光效率最高,封装白光后,在色温4500 K,驱动电流20 mA时,光效116.06 lm/W,对应电压50 V.测试其I-V曲线表明,开启电压为36 V,对应驱动电流为1.5 mA;在电流15 mA至50 mA时,光功率随驱动电流增加近似于线性增加,在此区域光效随电流增加而降低的幅度比较缓慢,表明GaN基高压直流LED适宜于采用大电流密度驱动,而不会出现驱动电流密度增加导致量子效率明显下降(efficiencydroop),为从芯片层面研究解决量子效率下降难题提供了一种新思路.
GaN-based HVDC LED was fabricated by using sapphire substrate (PSS) epitaxial wafer to prepare positive-trapezoidal core-structure GaN-based high voltage DC LED.Compared with other structural devices, this device has the highest luminous efficiency, white light encapsulation, 4500 K and a driving current of 20 mA, the luminous efficiency is 116.06 lm / W and the corresponding voltage is 50 V. Testing of its IV curve shows that the starting voltage is 36 V and the corresponding driving current is 1.5 mA; at currents of 15 mA to 50 mA, The power increases linearly with the increase of driving current, and the luminous efficiency decreases slowly with the increase of current in this region, indicating that GaN-based high voltage DC LED is suitable for driving with high current density without increasing the driving current density and leading to quantum efficiency A significant reduction (efficiencydroop), provides a new idea for solving the problem of quantum efficiency decline from the chip level.