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In this paper,the influence of a drain field plate(FP)on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor(HEMT)is investigated.The HEMT with only a gate FP is optimized,and breakdown voltage VBRis saturated at 1085 V for gate–drain spacing LGD≥8μm.On the basis of the HEMT with a gate FP,a drain FP is added with LGD=10μm.For the length of the drain FP LDF≤2μm,VBRis almost kept at 1085 V,showing no degradation.When LDFexceeds 2μm,VBRdecreases obviously as LDFincreases.Moreover,the larger the LDF,the larger the decrease of VBR.It is concluded that the distance between the gate edge and the drain FP edge should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGDat which VBR begins to saturate in the first structure.The electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.
In this paper, the influence of a drain field plate (FP) on the forward blocking characteristics of an AlGaN / GaN high electron mobility transistor (HEMT) is investigated. The HEMT with only a gate FP is optimized, and breakdown voltage VBRis saturated at 1085 V for gate-drain spacing LGD ≧ 8 μm. On the basis of the HEMT with a gate FP, a drain FP is added with LGD = 10 μm. For the length of the drain FP LDF ≦ 2 μm, VBRis is almost kept at 1085 V, showing no degradation. When LDFexceeds 2μm, VBRdecreases obviously as LDFincreases.Moreover, the larger the LDF, the larger the decrease of VBR.It is concluded that the distance between the gate edge and the drain FP edges should be larger than a certain value to prevent the drain FP from affecting the forward blocking voltage and the value should be equal to the LGDat which VBR begins to saturate in the first structure. electric field and potential distribution are simulated and analyzed to account for the decrease of VBR.