采用 N2 O和 NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。实验结果表明 ,该技术能够有效降低多晶硅薄膜的界面态密度 ,提高多晶硅薄膜晶体管性能。二次离子质谱仪分析表明在 p- Si/ Si O2界面有氮原子富积 ,说明生成了强的 Si- N键 The passivation of polycrystalline silicon film surface and gate oxide surface was performed by N2 O and NH3 plasma passivation techniques. The experimental results show that the technology can effectively reduce the interfacial density of polycrystalline silicon thin films and improve the performance of polycrystalline silicon thin film transistors. Secondary ion mass spectrometry analysis showed that there was nitrogen atom enrichment at the p-Si / Si O2 interface, indicating that a strong Si-N bond was formed