论文部分内容阅读
文章测量了单胞、双胞、六胞大功率MESFET的S参数，通过精确的误差控制，进行数据处理，得到了单胞拟合成双胞、单胞拟合成六胞的S参数，通过比较得出了一种间接获取大功率管芯S参数的方法，实验证明，此办法简单可行。
In this paper, we measured the S parameters of single cell, double cell, and six-cell high-power MESFETs. The data were processed by accurate error control, and the S parameters of single cell to double cell and single cell to six cells were obtained. A method of indirectly obtaining S parameters of high power die is obtained. Experiments prove that this method is simple and feasible.