论文部分内容阅读
A theory of the switching response of the CBMOST (or COOLMOST,or Super Junction device) is proposed based on the physical and geometrical parameters inherent in the voltage sustaining structure.It is proven that the salient feature of sucha device is that the storage time in tu-off process is a little longer than the conventional power MOST due to its heavier doping.Explanation for the fast tu-on process despite of having an oppositely doped region inside the voltage sustaining layer is also given.It is also shown that if p- (or n-) regions in the CBstructure are not directly contacted to the n+ (or p+)drain region,then the device is a normally-on one.Measures are proposed for the real device to be notnormally-on.