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After annealing the solution cast P(VDF-TrFE) films at elevated temperatures, which were synthesized via a full hydrogenation process from P(VDF-CTFE) with a composition of VDF/TrFE = 80/20(mol%), a series of P(VDF-TrFE) films were fabricated in present work. The crystalline and ferroelectric phases of the films were carefully characterized and their dielectric, ferroelectric and piezoelectric properties were systematically investigated. The improved crystalline and ferroelectric phases in the films induced by annealing at elevated temperatures are responsible for the significant improved electric properties of the films. The optimized annealing temperature is found to be 130 °C and the best performance including the highest dielectric constant of 12.5 at 1 kHz, the largest maximum polarization of 11.21 μC/cm~2 and remnant polarization of 7.22 μC/cm~2, the lowest coercive electric field of 56 MV/m, and the highest piezoelectric coefficient of -25 pC/N is observed.
After annealing the solution cast P (VDF-TrFE) films at elevated temperatures, which were synthesized via a full hydrogenation process from P (VDF-CTFE) with a composition of VDF / TrFE = 80/20 (mol% The crystalline and ferroelectric phases of the films were carefully characterized and their dielectric, ferroelectric and piezoelectric properties were systematically investigated. The improved crystalline and ferroelectric phases in the films induced by annealing at elevated temperatures are responsible for the significant improved electric properties of the films. The optimized annealing temperature is found to be 130 ° C and the best performance including the highest dielectric constant of 12.5 at 1 kHz, the largest maximum of of 11.21 μC / cm ~ 2 and the remnant polarization of 7.22 μC / cm 2, the lowest coercive electric field of 56 MV / m, and the highest piezoelectric coefficient of -25 pC / N is observed.