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经中国电子学会批准,中国电子学会半导体集成技术学会和微波学会定于1983年10月在南京联合召开砷化镓场效应晶体管研究及整机应用和微波集成电路结构及工艺专题讨论会.会议由南京固体器件研究所和上海微波技术研究所负责筹备.会议内容包括:砷化镓场效应管研究及整机应用方面的述评,砷化镓场
With the approval of China Institute of Electronics, the Institute of Semiconductor Integrated Technology and the Microwave Society of China Institute of Electronics are scheduled to hold a symposium on the structure of gallium arsenide field-effect transistor (FET) and its application and structure and process of microwave integrated circuits in Nanjing in October 1983. Nanjing Institute of solid state devices and Shanghai Institute of microwave technology is responsible for preparation.The meeting includes: gallium arsenide field effect transistor research and application of the commentary, gallium arsenide field