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采用不同的溅射工艺参数及基片材料制备了铜薄膜,用划痕法测试了薄膜结合强度,研究了溅射功率、溅射气压、溅射时间、基片温度及基片材料对铜薄膜结合强度的影响。结果表明,在功率85W,溅射气压1.5 Pa,时间30 min,基片温度150℃的条件下,薄膜结合强度为26.9 N。与硅片相比,玻璃表面的铜薄膜具有更高的结合强度。
Copper films were prepared by using different sputtering process parameters and substrate materials. The bonding strength of the films was measured by scratch test. The effects of sputtering power, sputtering pressure, sputtering time, substrate temperature and substrate film thickness on copper film The effect of bond strength. The results showed that the bonding strength of the films was 26.9 N under the conditions of a power of 85W, a sputtering pressure of 1.5 Pa, a time of 30 min and a substrate temperature of 150 ℃. Compared with the silicon wafer, the glass surface of the copper film has a higher bonding strength.