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将CuInSe_2薄膜在H_2S与Ar的混合气体中硫化是制备CuIn(S_xSe_(1-x))_2薄膜的一种常用方法。硫化所用到的CuInSe_2薄膜是用溶剂热法生成的CuInSe_2纳米颗粒旋涂而成。不同于其他真空条件下制备CuInSe_2薄膜的方法.溶剂热法的优点是其相对简单的制备工艺和较低廉的成本。对硫化过程进行研究后发现,硫化温度和时间直接影响CuIn(S_xSe_(1-x))_2薄膜的质量,诸如薄膜成分、结晶度、均匀性和带隙宽度都可以通过改变这些实验条件来进行控制。
Curing CuInSe_2 thin films in a mixed gas of H 2 S and Ar is a common method for preparing CuIn (S_xSe_ (1-x)) _ 2 thin films. The CuInSe_2 thin films used for curing are spin-coated with CuInSe_2 nanoparticles generated by the solvothermal method. Different from other vacuum conditions for the preparation of CuInSe_2 thin film method. Solvothermal method has the advantage of its relatively simple preparation process and lower cost. The vulcanization process was studied and found that the curing temperature and time directly affect the quality of CuIn (S_xSe_ (1-x)) _ 2 thin films, such as film composition, crystallinity, uniformity and band gap width can be carried out by changing these experimental conditions control.