本文首先给出了SOI上纳米金属 氧化物 半导体场效应晶体管 (NANO MOSFET)的结构 ,它是一种非传统MOSFET .NANO MOSFET源漏区采用金属 ,沟道采用本征硅 ,该结构避免了传统MOSFET的短沟道效应 .利用一组基本器件方程式 ,我们模拟并分析了NANO MOSFET的基本特性 .计算表明 ,NANO MOSFET在一定范围内源漏电导受栅极电压显著调控 ,适用于各种数字电路 ,包括存储单元 .另外 ,选取合适的直流偏置点 ,NANO MOSFET可用作模拟小信号放大器 This paper first presents the structure of nano-metal-oxide-semiconductor field-effect transistor (NANO MOSFET) on SOI, which is a kind of non-traditional MOSFET.NANO MOSFET uses metal as the source and drain regions and intrinsic silicon as the channel, which avoids the traditional MOSFET short channel effect.Using a set of basic device equations, we simulate and analyze the basic characteristics of the NANO MOSFET.Comparison shows that, within a certain range, NANO MOSFET source and drain conductance significantly controlled by the gate voltage, suitable for a variety of digital circuits , Including memory cells.In addition, select the appropriate DC bias point, NANO MOSFET can be used as analog small signal amplifier