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实验模拟锗晶体电火花线切割加工过程,提出“钝化膜”这个概念。通过理论分析、观察实验现象、运用XRD技术分析新生成物质,确定这种新生成的物质为电解的锗离子与氢氧根离子反应生成的半导体氧化物。针对锗的钝化,提出两种钝化预防与消除方法,通过实验比较,确定“涂抹法”是预防钝化的有效措施。利用这种方法进行了实验验证与实际加工,与原来的加工方法进行实验对比,发现切割效率、稳定性得到很大的提高与改善。
Experimental simulation of germanium crystal WEDM process, put forward the “passive film” concept. Through theoretical analysis and observation of the experimental phenomena, XRD was used to analyze the newly-formed materials to confirm that the newly generated material was a semiconductor oxide formed by the reaction of germanium ion and hydroxide ion. According to the passivation of germanium, two methods of passivation prevention and elimination were put forward. Through experimental comparison, it was confirmed that “smear method” was an effective measure to prevent passivation. The experimental verification and actual processing are carried out by using this method. Experimental comparison with the original processing method shows that the cutting efficiency and the stability are greatly improved and improved.