飞利浦公司日前宣布,在LDMOS技术上取得重大突破,可降低3G蜂窝基站的复杂性和运营成本,同时大大增强性能和可靠性。采用飞利浦新型第4代LDMOS技术生产的射频功率晶体管与现有LDMOS器件相比,增益更大,运行效率更高。因此,射频功率放大器需要的增益级更少,运行能量消耗也更少。这些新型晶体管具备的优异线性功能(即使在大功率级别下)意味着它们能满足多 Philips announced a major breakthrough in LDMOS technology to reduce the complexity and operating costs of 3G cellular base stations while greatly enhancing performance and reliability. RF power transistors manufactured with Philips’ new 4th Generation LDMOS technology gain more and operate more efficiently than existing LDMOS devices. As a result, RF power amplifiers require less gain stage and consume less operating energy. The excellent linearity of these new transistors (even at high power levels) means they can meet more