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随着集成电路芯片器件特征尺寸不断缩小和一些特色工艺的要求,金属薄膜淀积对反应腔真空度和残余气体的要求越来越高,尤其对于高温厚铝溅射工艺,真空反应腔微环境的细小变化可能导致器件失效。本文采用氦质谱检漏仪,残余气体仪对出现问题的8英寸Al,W金属薄膜淀积设备进行真空和残余气体检查,采用扫描电子显微镜,透射电子显微镜,能量色散X射线光谱仪等方法对缺陷进行分析。研究表明设备真空腔体微漏和极微量的残余气体对Al,W金属薄膜质量影响很大。从设备的角度提出改善真空度、减少残余气体的措施,这些措施在实际生产中得到了验证和应用,达到减少设备停机时间,减少产品缺陷,提高成品率的效果。
With the ever shrinking feature size of integrated circuit chip devices and the demands of some special processes, the deposition of metal thin film on the vacuum of the reaction chamber and the residual gas are getting higher and higher, especially for the high temperature thick aluminum sputtering process, the vacuum chamber microenvironment Small changes may cause device failure. In this paper, helium mass spectrometer leak detector, residual gas meter on the problems of 8-inch Al, W metal film deposition equipment for vacuum and residual gas inspection, using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy and other methods of defects Analyze. The research shows that the micro-leakage of the vacuum chamber and the trace residual gas affect the quality of the Al and W metal thin films greatly. From the equipment point of view to improve the degree of vacuum to reduce residual gas measures, these measures in the actual production has been verified and applied to reduce equipment downtime, reduce product defects and improve the yield results.