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报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反向击穿电压分别为 4V和 7.5 V。这些直流特性超过了相同的材料和工艺条件下 Ga As基 PHEMT的水平 ,与 In P基 In Al As/In Ga As HEMT的性能相当
The GaAs-based InAlAs / InGaAs grown by MBE technology is reported to change the fabrication process of MHEMT and the DC performance of the device. For devices with a gate length of 0.8 μm, the maximum extrinsic transconductance and saturation current densities were 305 mS / mm and 1 90 mA / mm, respectively. Source and drain breakdown voltage and gate reverse breakdown voltage were 4V and 7.5V. These DC characteristics exceed the GaAs-based PHEMT levels under the same material and process conditions and are comparable to those of InP-based InAlAs / InGaAsHEMTs