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利用标准微电子工艺研制出了一种可以应用于微波倍频电路中的肖特基势垒变容二极管,采用平面结构的制作工艺,克服了传统制作工艺的不易集成的缺点。并且在N型层的掺杂浓度呈指数规律,使变容管的变容比高于传统的均匀掺杂结构,有利于提高倍频电路的工作频率和输出功率。采用台面隔离工艺以形成分别用于制作肖特基接触和欧姆接触的两个台面。经过测试,得到-6V～0.5V电压下的电流特性和-4V～0.2V电压下的电容特性曲线。变容比高达2.3。
A Schottky barrier varactor diode that can be used in the microwave frequency doubling circuit is developed by using standard microelectronic technology. The fabrication process of the planar structure is adopted to overcome the shortcomings of the traditional manufacturing process that are not easy to integrate. And the doping concentration in the n-type layer is exponential, so that the varactor is higher than the conventional uniform doping structure, which is beneficial to improve the operating frequency and output power of the frequency multiplying circuit. A mesa isolation process is used to form two mesas for making Schottky contacts and ohmic contacts, respectively. After testing, the current characteristics of -6V ~ 0.5V voltage and the capacitance characteristic curve of -4V ~ 0.2V voltage are obtained. Volatility up to 2.3.