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采用固相反应合成了CuAl1-xFexO2单相多晶材料,系统报道了该系列样品的X射线衍射(XRD)、紫外吸收光谱以及电学性能的测量。结果表明,Fe3+取代CuAlO2中的Al3+,不改变材料的晶体结构,随着掺杂量的增加,材料的光学带隙宽度逐渐减小,导电性能明显提高。当x=0.10时,样品的室温电导率达到3.38×10-1S·cm-1;所有掺杂样品的电导率随温度变化曲线在近室温区,很好地符合Arrhenius关系,其热激活能为20～32meV;Hall系数均为正值,表明所有样品都为p型半导体。
The CuAl1-xFexO2 single-phase polycrystalline materials were synthesized by solid-state reaction. The XRD, UV absorption spectra and electrical properties of the samples were reported. The results show that the substitution of Fe3 + for Al3 + in CuAlO2 does not change the crystal structure of the material. With the increase of doping amount, the optical band gap of the material decreases gradually and the conductivity increases obviously. When x = 0.10, the room temperature conductivity of the sample reaches 3.38 × 10-1S · cm-1. The conductivity curves of all the doped samples with the temperature near the room temperature are in good agreement with the Arrhenius relationship, and the thermal activation energy is 20 ~ 32meV; Hall coefficient is positive, indicating that all samples are p-type semiconductor.