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日本Toyoda Gosei公司近日研发出垂直氮化镓肖特基势垒二极管(SBD),能够在790V反向阻断的条件下,处理50A的正向电流。研究人员称,这款在独立氮化镓衬底上构成垂直肖特基势垒二极管同时具有如此优越的正向电流和阻断电压特性,还是被报道的首款产品。采用金属有机气相沉积法在独立重掺杂n+氮化镓衬底上制成10μm厚度轻掺杂n-氮化镓层。SBD由凸型隔离平台、镍制肖特基正极,绝缘薄膜,铝基场板和铝/钛背面接触阳极构成。绝缘薄膜由500nm二氧化硅和100nm氧化铝
Japan Toyoda Gosei company recently developed a vertical gallium nitride Schottky barrier diode (SBD), capable of reverse blocking 790V conditions, the 50A of the forward current. The researchers said that this vertical GaN Schottky barrier diode on the independent substrate while having such a combination of forward current and blocking voltage characteristics, is also reported as the first product. A 10 μm-thick lightly doped n-gallium nitride layer was formed on an independently heavily doped n + gallium nitride substrate by metal-organic vapor deposition. The SBD consists of a convex isolation platform, a nickel Schottky anode, an insulating film, an aluminum field plate and an aluminum / titanium back contact anode. The insulating film consists of 500 nm silica and 100 nm alumina