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二相CCD存贮栅的结构和界面性质对电路特性,尤其是转移效率η有很大影响。采用典型的P沟Si栅结构,选用界面性质较好,稳定的HC1或C_2HCl_3氧化作存贮栅,制作了1024串并串移位寄存器。但发现电路中的Si栅检测电容漏电,达μA数量级。后来作出了不漏电的检测电容,但室温下的C-V特性呈现严重的不稳定滞后效应,如
The structure and interfacial properties of the two-phase CCD storage gate have a great influence on the circuit characteristics, especially the transfer efficiency η. Using a typical P-channel Si gate structure, the choice of the interface properties of good, stable HC1 or C2HCl_3 oxidation for the storage gate, produced 1024 serial string shift register. However, it was found that the leakage current of the Si gate detection capacitor in the circuit reached an order of μA. Later, a non-leakage detection capacitor was made, but the C-V characteristic at room temperature showed a serious instability hysteresis effect. For example,