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A generic analytical model and the ATLAS simulation of a homojunction light emitting diode(LED) based on p+-InAs0.91Sb0.09/n0-InAs0.91Sb0.09/n+-InAs0.91Sb0.09 materials grown on lattice matched p+-GaSb substrate are presented.This LED is suitable for use as source in the optical absorption gas spectroscopy in the mid-infrared spectral region at 300 K.The various electro-optical properties of the homojunction LED are evaluated using analytical techniques and ATLAS device simulation software.The current-voltage characteristics of the structure are computed analytically and simulated,and the results are found to be in good agreement.The output power of the homojunction LED is estimated as a function of bias current under high carrier injection and compared with the reported experimental results.
A generic analytical model and the ATLAS simulation of a homojunction light emitting diode (LED) based on p + -InAs0.91Sb0.09 / n0-InAs0.91Sb0.09 / n + -InAs0.91Sb0.09 materials grown on lattice matched p + -GaSb The substrates are presented. This LED is suitable for use as source in the optical absorption gas spectroscopy in the mid-infrared spectral region at 300 K. The various electro-optical properties of the homojunction LED are evaluated using analytical techniques and ATLAS device simulation software. The current-voltage characteristics of the structure are computed analytically and simulated, and the results are found to be in good agreement. Output power of the homojunction LED is estimated as a function of bias current under high carrier injection and compared with the reported experimental results.