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利用脉冲激光方法成功地制备了硅的一维纳米线 (SiNW )和氮化硼纳米管(BN -NTs) .该方法合成的一维纳米材料具有产量大 ,纯度高 ,直径均匀等特点 .利用透射电子显微镜对这些一维纳米材料的微观结构进行了表征 .观察到硅纳米线中存在微孪晶、堆垛层错、小角晶界等高密度的结构缺陷 .并且发现这些结构缺陷与硅纳米线的生长和形貌有着密切的关系 .BN -NTs主要为单层管 ,管的表面光滑而没有吸附物 ,单层管的形成可归结为在催化剂的作用下管的轴向生长速度远大于横向生长所致
One-dimensional silicon nanowires (SiNW) and boron nitride nanotubes (BN-NTTs) were successfully prepared by pulsed laser method.The synthesized one-dimensional nanomaterials have the characteristics of large yield, high purity and uniform diameter. Transmission electron microscopy was used to characterize the microstructure of these one-dimensional nanomaterials. High-density structural defects such as micro-twins, stacking faults and small-angle grain boundaries were observed in the silicon nanowires. The growth and morphology of the wire are closely related.BN -NTs mainly monolayer tubes, the surface of the tube smooth and without adsorbate, the formation of single-layer tube can be attributed to the axial growth rate of the tube is much greater than the role of the catalyst Due to horizontal growth