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据报道最近东芝开发了新型功率半导体器件——双极型 MOSFET。该器件的基本结构除了衬底的漏层不是 n 层而是 p 层以外,基本上与垂直型功率 MOSEFT的结构相似,它是采用了两步扩散形成低阻 p 基区层,独特的剥离图形及其最佳化技术。象n 型缓冲层杂质浓度、精密控制的空穴注入量的最佳化、电子束照射后引起载流子寿命的精密控制等都是使用了一系列先进技术而制成的。它能在低电压控制下高速驱动大功率,导通电流特性表明负温度性能,负荷短路耐量大,电压过压耐量大,易于并联连接。由于开关性能好,在变换器应用中能获得极好性能。栅极驱动电容小,提高了控制响应。
It is reported that Toshiba recently developed a new type of power semiconductor devices - bipolar MOSFET. The basic structure of the device is basically similar to that of the vertical power MOSEFT, except that the drain layer of the substrate is not n-layer but p-layer. It uses a two-step diffusion to form a low resistance p base layer, a unique peel pattern And its optimization technology. Such as the n-type buffer layer impurity concentration, the amount of precise control of the hole injection amount of electron beam irradiation caused by the carrier lifetime precision control are made using a series of advanced technology. It can drive high-speed high-speed under low voltage control. The on-current characteristics show negative temperature performance, large load short-circuit tolerance, large voltage over-voltage tolerance and easy connection in parallel. Due to the good switching performance, excellent performance is achieved in converter applications. Small gate drive capacitance improves control response.