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The surface photovoltage (SPV) mechanism of a silicon nanoporous pillar array (Si-NPA) is investigated by using SPV spectroscopy in different exteal electric fields.Through comparisons with the SPV spectrum of single crystal silicon (sc-Si),the silicon nano-crystallite (nc-Si)/SiOx nanostructure of Si-NPA is proved to be capable of producing obvious SPV in the wavelength range 300-580nm.The SPV for the sc-Si layer and the nc-Si/SiOxnanostructure has shown certain contrary characters in different exteal electric fields.Through analysis,thelocalized states in the amorphous SiOx matrix are believed to dominate the SPV for the nc-Si/SiOx nanostructure.