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This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around(GAA) MOSFETs.The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs,namely drain current(/d),transconductance to drain current ratio(g_m/I_d),I_(on)/I_(off),the cut-off frequency(f_T) and the maximum frequency of oscillation(/max) are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator,ATLAS~(TM).It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics(g_m/I_d,f_T and /max) compared to the nanowire-based gate-all-around GAA MOSFETs.The silicon-nanotube MOSFET shows an improvement of ~2.5 and 3 times in the case of f_T and /max values respectively compared with the nanowire-based gate-all-around(GAA) MOSFET.
This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around (GAA) MOSFETs. The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs , the drain current (/ d), transconductance to drain current ratio (g_m / I_d), I_on / I_off, the cut-off frequency (f_T) and the maximum frequency of oscillation (/ max) are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator, ATLAS ™. It is found that the silicon-nanotube MOSFETs have much more superior analog and RF characteristics (g_m / I_d, f_T and / max) compared to the nanowire-based gate-all-around GAA MOSFETs. The silicon-nanotube MOSFET shows an improvement of ~ 2.5 and 3 times in the case of f_T and / max values respectively compared with the nanowire- all-around (GAA) MOSFET.