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绝缘栅双极型晶体管IGBT综合了GTR和MOSFET的优点,近年来,在电力电子领域得到了广泛的运用。受限于单只器件的耐压水平,在高压大功率领域,IGBT模块直接串联技术是一个简单、经济的使用方案。为了保证IGBT器件的安全使用,如何解决串联均压是关键。文中提出了一种基于无源缓冲电路和栅极延时控制的均压策略,从技术原理上对其进行了详细的阐述,并通过DC15 k V/300 A脉冲实验予以了验证,实验结果显示,该技术能够实现良好的串联均压,抑制IGBT关断电压过冲,具备了一定的工程运用价值。
Insulated gate bipolar transistor IGBT combines the advantages of GTR and MOSFET, in recent years, has been widely used in power electronics. Restricted by the withstand voltage of a single device, IGBT module direct tandem technology is a simple and economical solution for high voltage and high power applications. In order to ensure the safe use of IGBT devices, how to solve the series voltage equalization is the key. A voltage sharing strategy based on passive snubber circuit and gate delay control is proposed in this paper. The technical principle is described in detail and verified by a pulsed DC15 k V / 300 A pulse. The experimental results show , The technology can achieve a good series voltage, suppress IGBT turn-off voltage overshoot, with a certain value of the project.