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借助高温扫描隧道显微镜和光电子能谱技术,深入研究了SrO/Si(100)表面向Sr/Si(100)再构表面的动态转化过程.Sr/Si(100)再构表面在硅基氧化物外延生长中起重要作用.在该动态转化过程中,样品在500℃的退火温度下,表面出现SrO晶化的现象;在550—590℃的退火温度下,SrO/Si(100)开始向Sr/Si(100)转化,界面和表面上的氧以气态的SiO溢出,使得表面出现大量凹槽状缺陷.并且在此动态转化过程中表面的电子态表现出金属特性,这是由于表层硅原子发生断键重排,从而在表面出现悬挂键产生的.
The dynamic conversion of SrO / Si (100) to the Sr / Si (100) reconstructed surface was investigated by means of high temperature scanning tunneling microscopy and photoelectron spectroscopy. The surface reconstruction of Sr / Si (100) Epitaxial growth plays an important role in the dynamic conversion process, the sample at 500 ℃ annealing temperature, the surface of the phenomenon of SrO crystallization; annealing temperature 550-590 ℃, SrO / Si (100) began to Sr / Si (100), the oxygen on the interface and on the surface spills out as gaseous SiO, resulting in a large number of groove-like defects on the surface, and the electronic states of the surface during this dynamic transformation show metallic properties due to surface silicon atoms The occurrence of dangling bonds occurs on the surface due to the rearrangement of the broken bonds.