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据国家自然科学基金委员会1996年7月25日报道,我国科研人员自行设计、加工的我国第一台激光分子束外延设备已在中国科学院物理研究所建成。传统分子束外延技术的缺点是很难实现高熔点材料的生长;普通激光沉淀技术则难于生长超薄膜。为生长高熔点的超薄膜,90年代初,日本、法国、美国等发达国家相继建立了激光分子束外延系统。
According to the report of the National Natural Science Foundation of China on July 25, 1996, the first laser molecular beam epitaxy equipment designed and processed by our country’s researchers has been built at the Institute of Physics, Chinese Academy of Sciences. The disadvantage of traditional molecular beam epitaxy is that it is hard to realize the growth of high melting point materials. Ordinary laser deposition technology is difficult to grow ultra-thin films. For the growth of high melting point ultra-thin film, the early 90s, Japan, France, the United States and other developed countries have established a laser molecular beam epitaxy system.