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量子阱红外探测器(QWIP)阵列具有重要的实用意义。国外的研究已经相当成熟,但是在国内,量子阱红外探测器阵列的研究水平还较低,尤其是对于双色量子阱红外探测器阵列的研究更是刚刚起步。文中使用GaAs/AlGaAs、InGaAs/AlGaAs应变量子阱和三端电极引出的器件结构研制出128×128中/长波双色量子阱红外探测器阵列。该结构实现了同像元同时引出双色信号。器件像元中心距为40μm,像元有效面积为36μm×36μm。探测器芯片与读出电路互连并完成微杜瓦封装。在65 K条件下测试,峰值波长为:中波5.37μm,长波8.63μm,器件的平均峰值探测率为:中波4.75×109cmHz1/2W-1,长波3.27×109cmHz1/2W-1。并进行了双波段的红外演示成像。
Quantum well infrared detector (QWIP) array has important practical significance. Research abroad is quite mature, but in China, the research on quantum well infrared detector array is still relatively low, especially for the study of two-color quantum well infrared detector array. In this paper, 128 × 128 mid / long wavelength two-color quantum-well infrared detector arrays were fabricated using GaAs / AlGaAs, InGaAs / AlGaAs strained quantum wells and three-terminal electrodes. This structure realizes that the same picture element leads out the two-color signal at the same time. The center distance of the device pixel is 40μm and the effective area of the pixel is 36μm × 36μm. The detector chip is interconnected with the readout circuitry and complete the micro-dura package. Under the condition of 65K, the peak wavelength is 5.37μm for medium wave and 8.63μm for long wave. The average peak detection rate of the device is 4.75 × 109cmHz1 / 2W-1 and 3.27 × 109cmHz1 / 2W-1. And conducted a dual-band infrared demonstration imaging.