【摘 要】
：
Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxidesemiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CM
【机 构】
：
Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, Chongqi
论文部分内容阅读
Novel high power supply rejection ratio (PSRR) high-order temperature-compensated subthreshold metal-oxidesemiconductor (MOS) bandgap reference (BGR) is proposed in Semiconductor Manufacturing International Corporation (SMIC) 0.13 μm complementary MOS (CMOS) process.By adopting subthreshold MOS field-effect transistors (MOSFETs) and the piecewise-curvature temperature-compensated technique,the output reference voltage\'s temperature performance of the subthreshold MOS BGR is effectively improved.The subthreshold MOS BGR achieves high PSRR performance by adopting the technique of pre-regulator.Simulation results show that the temperature coefficient (TC) of the subthreshold MOS BGR is 1.38× 10-6/℃ when temperature is changed from-40 ℃ to 125 ℃ with a power supply voltage of 1.2 V.The subthreshold MOS BGR achieves the PSRR of-104.54 dB,-104.54 dB,-104.5 dB,-101.82 dB and-79.92 dB at 10 Hz,100 Hz,1 kHz,10 kHz and 100 kHz respectively.
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