论文部分内容阅读
利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为5·8nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6—8nm之间;紫外可见谱结果表明在500—700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为3·22eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er3+离子在554nm处的强烈绿光发射.
GaN: Er thin films were prepared by direct current magnetron co-sputtering method. The X-ray diffraction results showed that the films were of nanocrystalline structure. The average size of the GaN thin films was calculated to be 5.8 nm according to the Scherrer formula. Transmission electron microscopy The results show that the amorphous matrix mosaic of GaN nanoparticles, the size of 6-8nm; UV-visible spectrum results show that in the visible range of 500-700nm, the average transmittance of the film is greater than 80%, based on the UV-visible spectrum , The optical band gap of the nanocrystalline GaN thin film was calculated to be 3.22 eV by the Tauc formula. Finally, the room temperature photoluminescence spectra of the GaN: Er thin film were measured and the intense green emission of Er3 + ions at 554 nm was obtained.