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概述了未来IC器件可采用的前道CMP设备及整合解决方法的巨大进展。为提高设备的可用性和生产线的运作效率,在一台设备上采用多用途的整合解决方法。而且,对这些方法与下一代无磨料网膜抛光设备的能力进行了比较。未来数代器件要求的CMP工艺技术包括先进的抛光头、先进的现场终点系统、多平台、多抛光头结构。与下一代消耗品(单独硬抛光垫、高平面性磨料、无磨料抛光等)结合,能使直接抛光浅沟槽隔离(STI)工艺方法满足0.18μm乃至更小特征尺寸的器件要求。采用新型多步工艺进行了多晶硅CMP。先进的多晶硅金属介质(PMD)抛光工艺展示了更长寿命的抛光垫和更高的金刚石盘片生产效率和更强的设备可用性。这些工艺技术已全部成功地使用在生产线,并正在生产中进行测试。
Outlines the tremendous advancements in front-end CMP devices and integration solutions available for future IC devices. To increase the availability of equipment and the efficiency of the production line, a multi-purpose, integrated solution is used on one piece of equipment. What’s more, the capabilities of these methods and the next generation of abrasive-free web polishing equipment are compared. CMP process technologies required by several generations of devices in the future include advanced polishing heads, advanced field termination systems, multi-platform, multi-head construction. Combined with the next generation of consumables (hard pad alone, high planarity, no abrasive polishing, etc.), the Direct Polishing Shallow Slot (STI) process approach meets the device requirements of 0.18μm and smaller feature sizes. Polysilicon CMP is performed using a new multi-step process. Advanced polycrystalline metal-dielectric (PMD) polishing processes demonstrate longer-lasting polishing pads and higher diamond platter productivity and greater device availability. All of these processes have been successfully used in production lines and are being tested in production.