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设计了目标探测波长为320nm的AlGaN基共振腔增强的p-i-n型紫外光电探测器,共振腔由分别作为底镜和顶镜的AlN/Al0.3Ga0.7 N布拉格反射镜和空气/GaN界面组成,有源区p-GaN/i-GaN/n-Al0.38Ga0.62 N被置于腔内.该结构采用金属有机物化学气相淀积(MOCVD)方法在蓝宝石衬底和GaN模板上外延生长得到.光谱响应测试显示了正入射时该器件在波长313nm处出现响应的选择增强,零偏压下响应度为14mA/W.
A pin-type ultraviolet photodetector with AlGaN-based resonant cavity enhanced at 320nm was designed. The resonant cavity consisted of an AlN / Al0.3Ga0.7N Bragg reflector and an air / GaN interface as the bottom mirror and the top mirror respectively. The p-GaN / i-GaN / n-Al0.38Ga0.62N active layer is deposited in the cavity, and the structure is epitaxially grown on a sapphire substrate and a GaN template using a metal organic chemical vapor deposition (MOCVD) method. The spectral response test shows that the device responds selectively at 313 nm at normal incidence with a response of 14 mA / W at zero bias.