,Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffract

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Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-μm-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD).The minimum yield xmin=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality.From the SR-XRD results,we obtain the values of the screw and edge densities to be ρscrew =7.0027 X 109 and ρedge =8.6115 × 109 cm-2,respectively.The tetragonal distortion of the sample is found to be -0.27 % by angular scans,which is close to the -0.28 % derived by SR-XRD.The value of |e(⊥)/e‖| =0.6742 implies that the InN layer is much stiffer along the a axis than that along the c axis,where e‖ is the parallel elastic strain,and e⊥ is the perpendicular elastic strain.Photoluminescence results reveal a main peak of 0.653eV with the linewidth of 60meV,additional shoulder band could be due to impurities and related defects.
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