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单电子存储器是依据库仑阻塞原理操纵单个电子进行信息存储的一种量子器件。它具有低功耗、高速度、极小尺寸的优点,是现有存储器极有希望的替代品。信息的记忆性能是衡量存储器的一个重要参数,因而对单电子存储器的记忆性能研究有重要的意义。存储器的结构以及温度、电磁辐射等环境因素都对单电子存储器记忆时间产生影响,因而有必要寻求一种模型来综合各种因素对储存器存储寿命的影响。借鉴Gamow、Gurney和Condon处理某些重核α粒子自然衰变的方法对单电子存储器的记忆能力进行研究,考虑到了环境参数和结构参数对记忆性能的影响,给出了一种新的单电子存储器记忆时间模型,并对该模型进行详细的理论分析。
Single-electron memory is a quantum device that manipulates a single electron for information storage based on the Coulomb blocking principle. It has the advantages of low power consumption, high speed, very small size, is a very promising alternative to existing memory. The memory performance of information is an important parameter to measure the memory. Therefore, it is of great significance to study the memory performance of a single electronic memory. The structure of the memory and the environmental factors such as temperature and electromagnetic radiation have an impact on the memory time of the single electronic memory. Therefore, it is necessary to find a model to synthesize the influence of various factors on the storage life of the memory. Taking Gamow, Gurney and Condon as examples, the memory of single electron memory is studied by the way of dealing with the natural decay of some heavy nuclear α particles. Considering the influence of environmental parameters and structure parameters on the memory performance, a new single electronic memory Memory time model, and a detailed theoretical analysis of the model.