采用辉光放电等离子体增强化学气相沉积 (GP CVD)技术在低温条件下合成了高品质的亚微米金刚石薄膜 ,并通过对合成过程的实时发射光谱诊断确定了 [CH4 H2 ]系统参与金刚石合成反应的主要荷能粒子。对合成过程的研究表明 :采用这种技术能使电子增强热丝化学气相沉积 (EACVD)合成高品质金刚石薄膜的温度从 85 0℃降至 (340± 5 )℃ ;薄膜低温合成中的主要荷能粒子为CH3 、CH ,CH+ 、H 等 ,其中过饱和原子氢保证了高品质金刚石薄膜的合成 ;根据光诊断和探针测量的结果推断近表面辉光放电可在基片表面形成电偶极层 ,该偶极层是进行超常态反应的必要环境 ,并在低温合成中起重要作用 High-quality submicron diamond films were synthesized by glow discharge plasma-enhanced chemical vapor deposition (GP CVD) technique at low temperature. The [CH4 H2] system was confirmed to be involved in diamond synthesis reaction by real-time emission spectroscopy The main charge particles. The research on the synthesis process shows that the temperature of synthesizing high quality diamond film by EACVD can be reduced from 85 0 ℃ to 340 ± 5 ℃ using this technique. The main charge of low temperature synthesis The particles can be CH3, CH, CH +, H and so on. Among them, supersaturated atomic hydrogen ensures the synthesis of high quality diamond films. According to the result of photodiagnosis and probe measurement, it can be concluded that near surface glow discharge can form electric dipole Layer, the dipole layer is the necessary environment for the supernormal reaction, and plays an important role in low temperature synthesis