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在真空状态下,通过精确控制冷凝温度梯度,将氡源产生的氡气完全冷凝于一个小的金属表面,利用半导体探测器进行小立体角α测量,通过对各种影响因素的测量和修正,可以实现氡活度的绝对测量。此方法中,为了减小测量不确定度,要求冷凝氡源薄而均匀,活性区域的半径较小,以满足小立体角α绝对测量中近似点源的要求,并可忽略源的自吸收影响,这取决于冷凝氡源所处托盘的表面温度梯度分布。为达到最佳效果,首
In the vacuum state, by precisely controlling the condensation temperature gradient, the radon generated by the radon source is completely condensed on a small metal surface, and the small solid angle α measurement is performed by using the semiconductor detector. By measuring and correcting various influencing factors, Absolute measurement of radon activity can be achieved. In this method, in order to reduce the measurement uncertainty, it is required that the condensing radon source be thin and uniform, and the radius of the active region should be small so as to meet the approximate point source requirement in the absolute measurement of the small solid angle α and ignoring the self-absorption effect of the source , Depending on the surface temperature gradient distribution of the tray where the condensate radon source is located. For best results, first