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测量了用MOCVD技术制造的InP δ掺杂样品的磁输运特性,量子化Hall效应和高电场下的热电子效应.得到了该样品的载流子分布,子能带结构,杂质传播宽度和电子迁移率等基本物理参数,观察到填充因子v=2的量子Hall平台和负微分电阻现象,建立和证实了δ掺杂样品的热电子传输模型.
The magnetic transport properties, quantum Hall effect and thermionic effect in high electric field of InP δ -doped samples fabricated by MOCVD technique were measured. The carrier distribution, sub-band structure, impurity propagation width and Electron mobility and other basic physical parameters, the phenomenon of quantum Hall platform and negative differential resistance with v = 2 filling factor was observed, and the thermionic transport model of δ-doped sample was established and confirmed.