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日本富士实验室今天宣布,该实验室已经成功开发出世界第一个采用氮化镓(GaN)高电子迁移率晶体管(HEMT)技术的收发(T/R)组件。该组件的特征是输出10 W的功率,可以在C到Ku波段(即6-18 GHz)工作。和采用最近开发的GaN低噪声放大器(LNA)的世界最先进的GaN功率放大器(PA)一起,富士研究人员得到了一个高输出的T/R组件。这项技术可以把以前工作在不同波段的通讯设备整合到一个单一组件上,从而可以开发出更小更轻的雷达设备和无线通信系统。该技术的详细信息是6
Japan’s Fuji Laboratories announced today that it has successfully developed the world’s first receive / transmit (T / R) module using GaN high electron mobility transistor (HEMT) technology. The module features 10 W of output power and can operate in the C to Ku band (ie 6-18 GHz). Together with the world’s most advanced GaN power amplifier (PA) using the recently developed GaN Low Noise Amplifier (LNA), Fuji researchers have achieved a high-output T / R assembly. This technology allows for the integration of communications equipment previously in different bands into a single component, enabling the development of smaller and lighter radar equipment and wireless communications systems. The technical details are 6